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QFET N-CHANNEL
FQP1N60
FEATURES
BVDSS = 600V * * * * * * * * Advanced New Design Avalanche Rugged Technology Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 5.0nC (Typ.) Extended Safe Operating Area Lower RDS(ON): 9.3 (Typ.)
1 2 3
RDS(ON) = 11.5 ID = 1.2A
TO-220
1. Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristics Drain-to-Source Voltage Continuous Drain Current (TC = 25C) Continuous Drain Current (TC = 100C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC = 25C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds y x x z x Value 600 1.2 0.76 4.8 30 50 1.2 4.0 4.5 40 0.32 -55 to +150 C 300 A V mJ A mJ V/ns W W/C Units V A
THERMAL RESISTANCE
Symbol RJC RCS RJA Characteristics Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. - 0.5 - Max. 3.13 - 62.5 C/W Units
REV. B
1
(c) 1999 Fairchild Semiconductor Corporation
FQP1N60
QFET N-CHANNEL
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise specified)
Symbol BVDSS BV/TJ VGS(th) IGSS Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain (Miller) Charge Min. 600 - 3.0 - - - - - - - - - - - - - - - - Typ. - 0.4 - - - - - 9.3 0.9 120 20 3.0 5 25 7 25 5.0 1.0 2.6 Max. - - 5.0 100 -100 10 100 11.5 - 150 25 4.0 20 60 25 60 6.0 - - nC VDS=480V, VGS=10V ID=1.2A See Fig 6 & Fig 12 { | ns VDD=300V, ID=1.2A RG=50 See Fig 13 {| pF Units V V/C V nA A S Test Conditions VGS=0V, ID=250A ID=250A,
See Fig 7
VDS=5V, ID=250A VGS=30V VGS= -30V VDS=600V VDS=480V, TC=125C VGS=10V, ID=0.6A VDS=50V, ID=0.6A VGS=0V, VDS=25V f=1MHz See Fig 5 { {
IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD trr Qrr Characteristics Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge x { Min. - - - - - Typ. - - - 160 0.3 Max. 1.2 4.8 1.4 - - A V ns C Units Test Conditions Integral reverse pn-diode in the MOSFET TJ=25C, IS=1.2A, VGS=0V TJ=25C, IF=1.2A, VDD=480V diF/dt=100A/s {
Notes: x Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature y L=64mH, IAS=1.2A, VDD=50V, RG=25, Starting TJ =25C z ISD 1.2A, di/dt 200A/s, VDD BVDSS, Starting TJ =25C { Pulse Test: Pulse Width 300s, Duty Cycle 2% | Essentially Independent of Operating Temperature
2
QFET N-CHANNEL
FQP1N60
Fig 1. Output Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
Fig 2. Transfer Characteristics
10
0
ID, Drain Current [A]
ID , Drain Current [A]
10
0
150E
10
-1
25E -55E
O Note 1. VDS = 50V 2. 250is Pulse Test
10
-2
O Note : 1. 250is Pulse Test 2. TC = 25E
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
30
Fig 4. Source-Drain Diode Forward Voltage
VGS = 10V VGS = 20V
RDS(ON) [O], Drain-Source On-Resistance
20
IDR , Reverse Drain Current [A]
25
10
0
15
10
150E
25E
O Note : 1. VGS = 0V 2. 250is Pulse Test
5
O Note : TJ = 25E
0 0.0
0.5
1.0
1.5
2.0
2.5
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
200
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Fig 6. Gate Charge vs. Gate-Source Voltage
12
VDS = 120V
10
150
VGS , Gate-Source Voltage [V]
Ciss
VDS = 300V VDS = 480V
8
Capacitances [pF]
Coss
100
6
50
Crss
O Note ; 1. VGS = 0 V 2. f = 1 MHz
4
2
O Note : ID = 1.2 A
0 -1 10
0 10
0
10
1
0
1
2
3
4
5
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3
FQP1N60
QFET N-CHANNEL
Fig 7. Breakdown Voltage vs. Temperature
1.2
3.0
Fig 8. On-Resistance vs. Temperature
BV DSS , (Normalized) Drain-Source Breakdown Voltage
2.5
1.1
R DS(ON) , (Normalized) Drain-Source On-Resistance
2.0
1.0
1.5
1.0
0.9
O Note : 1. VGS = 0 V 2. ID = 250 iA
0.5
O Note : 1. VGS = 10 V 2. ID = 0.6 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Fig 9. Max. Safe Operating Area
10
1
Fig 10. Max. Drain Current vs. Case Temperature
1.2
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
1 ms
10
0
10 ms DC
ID, Drain Current [A]
3
100 s
0.9
0.6
10
-1
O Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.3
10
-2
10
0
10
1
10
2
10
0.0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
[C] TC, Case Temperature [E]
Fig 11. Thermal Response
( t) , T h e r m a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
O N o te s : 1 . Z e J C ( t ) = 3 .1 3 E / W M a x . 2 . D u t y F a c t o r , D = t 1 / t2 3 . T J M - T C = P D M * Z e J C( t )
PDM
10
-1
0 .0 2 0 .0 1 s in g le p u ls e
e JC
t1 t2
Z
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ]
4
QFET N-CHANNEL
FQP1N60
Fig 12. Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg
10V
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
VDS
90%
10V
DUT
Vin
10%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L VDS VDD ID RG VDD BVDSS IAS
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD
ID (t) DUT VDS (t)
tp
10V
Time
5
FQP1N60
QFET N-CHANNEL
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT + VDS _ IS L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * IS controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
6
QFET N-CHANNEL
FQP1N60
TO-220 Package Dimensions
TO-220 (FS PKG CODE AE)
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
September 1999, Rev B
7
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SetiesTM FASTTM FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM UHCTM VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVER ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHOLD SEMICONDUCTOR CORPORATION As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later data. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. The datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production

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